MG100G1FL1 - Silicon NPN Triple Transistor

Toshiba

Key Features

. The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h FE=100(Min. ) (Ic=100A) . Low Saturation Voltage : VcE( sat )=2V(Max. ) (Ic=100A . High Speed : tf =2As(Max. ) (Ic=100A).

MG100G1FL1 silicon npn triple transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	MG100G1FL1
Manufacturer	Toshiba
File Size	161.01 KB
Description	Silicon NPN Triple Transistor
Datasheet	MG100G1FL1 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
MG100G2YK1	TRANSISTOR MODULES	ETC
MG100G2YL1	TRANSISTOR MODULES	ETC
MG100	Metal Glaze Resistors	HITANO
MG1001	GUNN Diodes	Microsemi
MG1001	GaAs Hall	Matrixopto

Other Datasheets by Toshiba

Part Number	Description
MG100G1AL3	Transistor
MG100G2CH1	TRANSISTOR BJT POWER MODULE
MG100G2CL1	TRANSISTOR BJT POWER MODULE
MG100G2DL1	TRANSISTOR BJT POWER MODULE
MG100G2JL1	TRANSISTOR BJT POWER MODULE

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm 2-5.40 FEATURES . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h FE=100(Min. ) (Ic=100A) . Low Saturation Voltage : VcE( sat )=2V(Max. ) (Ic=100A . High Speed : tf =2As(Max. ) (Ic=100A) EQUIVALENT CIRCUIT 68 ^ i.^i 35 i 26 333 10.