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MG100J1ZS40

Manufacturer: Toshiba

MG100J1ZS40 datasheet by Toshiba.

MG100J1ZS40 datasheet preview

MG100J1ZS40 Datasheet Details

Part number MG100J1ZS40
Datasheet MG100J1ZS40_ToshibaSemiconductor.pdf
File Size 192.90 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100J1ZS40 page 2 MG100J1ZS40 page 3

MG100J1ZS40 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100J1ZS40 High Power Switching Applications Motor Control Applications MG100J1ZS40 Unit: mm l High input impedance l High spee : tf = 0.35µs (max) trr = 0.15µs (max) l Low saturation voltage.

MG100J1ZS40 Key Features

  • High input impedance
  • High spee : tf = 0.35µs (max) trr = 0.15µs (max)
  • Low saturation voltage : VCE (sat) = 3.5V (max)
  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Coll
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