MG100J2YS50 - N-Channel IGBT

Datasheet Details

Part number	MG100J2YS50
Manufacturer	Toshiba Electronic Devices & Storage
File Size	224.39 KB
Description	N-Channel IGBT
Datasheet	MG100J2YS50 Datasheet

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Full PDF Text Transcription

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TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case. l High input impedance. l Includes a complete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A) l Low saturation voltage : VCE (sat)=2.

Published: Apr 29, 2005 |