MG100J2YS50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case. l Includes a plete half bridge in one package.
MG100J2YS50 Key Features
- The electrodes are isolated from case
- High input impedance
- Includes a plete half bridge in one package
- Enhancement-mode
- High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A)
- Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Char