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MG100J2YS50

Manufacturer: Toshiba

MG100J2YS50 datasheet by Toshiba.

MG100J2YS50 datasheet preview

MG100J2YS50 Datasheet Details

Part number MG100J2YS50
Datasheet MG100J2YS50_ToshibaSemiconductor.pdf
File Size 224.39 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100J2YS50 page 2 MG100J2YS50 page 3

MG100J2YS50 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100J2YS50 High Power Switching Applications Motor Control Applications MG100J2YS50 Unit: mm l The electrodes are isolated from case. l Includes a plete half bridge in one package.

MG100J2YS50 Key Features

  • The electrodes are isolated from case
  • High input impedance
  • Includes a plete half bridge in one package
  • Enhancement-mode
  • High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A)
  • Low saturation voltage : VCE (sat)=2.70V (Max) (IC=100A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Char
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