MG100J6ES50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG100J6ES50 High Power Switching Applications Motor Control Applications MG100J6ES50 Unit: mm l The electrodes are isolated from case. l 6 IGBTs built into 1 package.
MG100J6ES50 Key Features
- The electrodes are isolated from case
- High input impedance
- 6 IGBTs built into 1 package
- Enhancement-mode
- High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A)
- Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A) Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 5