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TOSHIBA GTR Module Silicon N Channel IGBT
MG100J6ES50
High Power Switching Applications Motor Control Applications
MG100J6ES50
Unit: mm
l The electrodes are isolated from case.
l High input impedance.
l 6 IGBTs built into 1 package.
l Enhancement-mode.
l High speed : tf = 0.30µs (Max) (IC = 100A) trr = 0.15µs (Max) (IF = 100A)
l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 100A)
Equivalent Circuit
JEDEC EIAJ TOSHIBA
Weight: 505g (Typ.)
― ― 2-94A2A
000707EAA1
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
MG100J6ES50 Datasheet
