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MG100J7KS50 - N-Channel IGBT

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TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG100J7KS50 Unit: mm l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package. l Enhancement-mode l High speed type IGBT : VCE (sat) = 2.5 V (max) (@IC = 100 A) : tf = 0.5 µs (max) (@IC = 100 A) : trr = 0.3 µs (max) (@IF = 100 A) Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 520g (typ.
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