MG100J7KS50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG100J7KS50 High Power Switching Applications Motor Control Applications MG100J7KS50 Unit: mm l The electrodes are isolated from case. l High input impedance l 7 IGBTs built into 1 package.
MG100J7KS50 Key Features
- The electrodes are isolated from case
- High input impedance
- 7 IGBTs built into 1 package
- Enhancement-mode
- High speed type IGBT : VCE (sat) = 2.5 V (max) (@IC = 100 A) : tf = 0.5 µs (max) (@IC = 100 A) : trr = 0.3 µs