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MG100Q1ZS40

Manufacturer: Toshiba

MG100Q1ZS40 datasheet by Toshiba.

MG100Q1ZS40 datasheet preview

MG100Q1ZS40 Datasheet Details

Part number MG100Q1ZS40
Datasheet MG100Q1ZS40_ToshibaSemiconductor.pdf
File Size 190.98 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100Q1ZS40 page 2 MG100Q1ZS40 page 3

MG100Q1ZS40 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS40 MG100Q1ZS40 High Power Switching Applications Chopper Applications Unit: mm l High input impedance l High speed : tf = 0.5µs (max) trr = 0.5µs (max) l Low saturation voltage.

MG100Q1ZS40 Key Features

  • High input impedance
  • High speed : tf = 0.5µs (max) trr = 0.5µs (max)
  • Low saturation voltage : VCE (sat) = 4.0V (max)
  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit JEDEC JEITA TOSHIBA ― ― 2-108A3A Maximum Ratings
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