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MG100Q1ZS50

Manufacturer: Toshiba

MG100Q1ZS50 datasheet by Toshiba.

MG100Q1ZS50 datasheet preview

MG100Q1ZS50 Datasheet Details

Part number MG100Q1ZS50
Datasheet MG100Q1ZS50_ToshibaSemiconductor.pdf
File Size 251.20 KB
Manufacturer Toshiba
Description N-Channel IGBT
MG100Q1ZS50 page 2 MG100Q1ZS50 page 3

MG100Q1ZS50 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage.

MG100Q1ZS50 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max) @Inductive load
  • Low saturation voltage : VCE (sat) = 3.6V (Max)
  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei
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