MG100Q1ZS50 Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.6V (Max) l Enhancement-mode l The electrodes are isolated from case.
MG100Q1ZS50 Key Features
- High input impedance
- High speed : tf = 0.3µs (Max) @Inductive load
- Low saturation voltage : VCE (sat) = 3.6V (Max)
- Enhancement-mode
- The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei