• Part: MG100Q1ZS50
  • Manufacturer: Toshiba
  • Size: 251.20 KB
Download MG100Q1ZS50 Datasheet PDF
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MG100Q1ZS50 Description

TOSHIBA GTR Module Silicon N Channel IGBT MG100Q1ZS50 MG100Q1ZS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.3µs (Max) @Inductive load l Low saturation voltage.

MG100Q1ZS50 Key Features

  • High input impedance
  • High speed : tf = 0.3µs (Max) @Inductive load
  • Low saturation voltage : VCE (sat) = 3.6V (Max)
  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Wei