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MG240V1US41 Datasheet

Manufacturer: Toshiba
MG240V1US41 datasheet preview

Datasheet Details

Part number MG240V1US41
Datasheet MG240V1US41_ToshibaSemiconductor.pdf
File Size 226.57 KB
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
MG240V1US41 page 2 MG240V1US41 page 3

MG240V1US41 Overview

TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Enhancement-mode l High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current...

MG240V1US41 Key Features

  • The electrodes are isolated from case
  • High input impedance
  • Enhancement-mode
  • High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit Maximum Ratings (T
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