MG240V1US41 - Silicon N Channel IGBT GTR Module

Toshiba

Datasheet Details

Part number	MG240V1US41
Manufacturer	Toshiba
File Size	226.57 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG240V1US41 Datasheet
Additional preview pages of the MG240V1US41 datasheet.

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TOSHIBA GTR Module Silicon N Channel IGBT MG240V1US41 MG240V1US41 High Power Switching Applications Motor Control Applications Unit: mm l The electrodes are isolated from case l High input impedance l Enhancement-mode l High speed : tf = 1.5µs (Max.)(IC = 240A) trr = 0.6µs (Max.)(IF = 240A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (M4/M6 / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC EIAJ TOSHIBA Weight: 465g(Typ.) Rating 1700 ±20 240 480 240 480 2400 150 −40 ~ 125 4000 (AC 1 min.

Published: Apr 29, 2005 |