MG25Q1BS11 Description
TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.
MG25Q1BS11 Key Features
- Enhancement-mode
- The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collec