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MG25Q1BS11 Datasheet

Manufacturer: Toshiba
MG25Q1BS11 datasheet preview

Datasheet Details

Part number MG25Q1BS11
Datasheet MG25Q1BS11_ToshibaSemiconductor.pdf
File Size 176.30 KB
Manufacturer Toshiba
Description Silicon N - Channel IGBT
MG25Q1BS11 page 2 MG25Q1BS11 page 3

MG25Q1BS11 Overview

TOSHIBA IGBT Module Silicon N - Channel IGBT MG25Q1BS11 High Power Switching Applications Motor Control Applications MG25Q1BS11 Unit: mm l Enhancement-mode l The electrodes are isolated from case. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress.

MG25Q1BS11 Key Features

  • Enhancement-mode
  • The electrodes are isolated from case. Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristic Collec
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