MG25Q2YS40
Key Features
- High input impedance
- Low saturation voltage
- Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.)
- The electrodes are isolated from case
- Part: MG25Q2YS40
- Description: Silicon N Channel IGBT GTR Module
- Manufacturer: Toshiba
- Size: 597.15 KB