MG25Q2YS40 - Silicon N Channel IGBT GTR Module

Datasheet Summary

Features

High input impedance.
High speed:.
Low saturation voltage:.
Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. ).
The electrodes are isolated from case.
Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C).

Toshiba

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Datasheet Details

Part number	MG25Q2YS40
Manufacturer	Toshiba
File Size	597.15 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG25Q2YS40 Datasheet
Additional preview pages of the MG25Q2YS40 datasheet.

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Full PDF Text Transcription

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.

Published: Apr 29, 2005 |