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MG25Q2YS40 Datasheet

Manufacturer: Toshiba

MG25Q2YS40 datasheet preview

Datasheet Details

Part number	MG25Q2YS40
Datasheet	MG25Q2YS40_ToshibaSemiconductor.pdf
File Size	597.15 KB
Manufacturer	Toshiba
Description	Silicon N Channel IGBT GTR Module

MG25Q2YS40 Overview

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications.

MG25Q2YS40 Key Features

High input impedance
High speed
Low saturation voltage
Enhancement mode
The electrodes are isolated from case
Includes a plete half bridge card in one package
1200 ± 20 25 50 25 50
40 ~ 125 °C
3.0 3000 0.3 0.4 0.2
0.6 0.8 0.5

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Part Number	Description
MG25Q1BS11	Silicon N - Channel IGBT
MG25Q6ES42	Silicon N Channel IGBT GTR Module
MG25Q6ES50	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES50A	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES51	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES51A	N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25J1BS11	Silicon N - Channel IGBT
MG200H1AL1	DARLINGTON POWER MODULE
MG200J2YS50	Silicon N Channel IGBT GTR Module
MG200M1UK1	GTR Module

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