MG25Q2YS40 Description
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications.
MG25Q2YS40 Key Features
- High input impedance
- High speed
- Low saturation voltage
- Enhancement mode
- The electrodes are isolated from case
- Includes a plete half bridge card in one package
- 1200 ± 20 25 50 25 50
- 40 ~ 125 °C
- 3.0 3000 0.3 0.4 0.2
- 0.6 0.8 0.5