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MG25Q2YS40 - Silicon N Channel IGBT GTR Module

Key Features

  • High input impedance.
  • High speed:.
  • Low saturation voltage:.
  • Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat)= 4.0V (Max. ).
  • The electrodes are isolated from case.
  • Includes a complete half bridge card in one package Maximum Ratings (Ta = 25°C).

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Datasheet Details

Part number MG25Q2YS40
Manufacturer Toshiba
File Size 597.15 KB
Description Silicon N Channel IGBT GTR Module
Datasheet download datasheet MG25Q2YS40 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • High input impedance • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat)= 4.0V (Max.