MG25Q6ES42 - Silicon N Channel IGBT GTR Module

Datasheet Summary

Features

6 IGBTs are built into 1 package.
High speed:.
Low saturation voltage:.
Enhancement mode tf = 0.5µs (Max. ) trr = 0.5µs (Max. ) VCE (sat) = 4.0V (Max. ).
The electrodes are isolated from case Maximum Ratings (Ta = 25°C).

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	MG25Q6ES42
Manufacturer	Toshiba
File Size	595.24 KB
Description	Silicon N Channel IGBT GTR Module
Datasheet	MG25Q6ES42 Datasheet
Additional preview pages of the MG25Q6ES42 datasheet.

📁 Similar Datasheet

MG251A - 0.5 DUAL DIGIT NUMERIC DISPLAYS (Micro)
MG251C - 0.5 DUAL DIGIT NUMERIC DISPLAYS (Micro)
MG25664-01 - LCD (BONA)
MG25J6ES40 - HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS. (ETC)
MG25M2YK1 - TRANSISTOR MODULES (ETC)
MG25N2YK1 - TRANSISTOR MODULES (ETC)
MG25N2YK1 - TRANSISTOR MODULES (ETC)
MG25N2YL1 - TRANSISTOR MODULES (ETC)
MG200 - Metal Glaze Resistors (HITANO)
MG200F6ES61 - Compact IGBT Series Module (Powerex Power Semiconductors)

Other Datasheets by Toshiba

MG25Q6ES50 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES50A - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES51 - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q6ES51A - N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS)
MG25Q1BS11 - Silicon N - Channel IGBT
MG25Q2YS40 - Silicon N Channel IGBT GTR Module
MG25J1BS11 - Silicon N - Channel IGBT
MG200H1AL1 - DARLINGTON POWER MODULE

Full PDF Text Transcription

Click to expand full text

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications Features • 6 IGBTs are built into 1 package • High speed: • Low saturation voltage: • Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.

Published: Apr 29, 2005 |