MG25Q6ES42 Description
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications.
MG25Q6ES42 Key Features
- 6 IGBTs are built into 1 package
- High speed
- Low saturation voltage
- Enhancement mode
- The electrodes are isolated from case
- 40 ~ 125
- 3.0 3000 0.3 0.4 0.25
- 0.6 0.8 0.5
- 0.625 °C/W