MG25Q6ES42
Key Features
- 6 IGBTs are built into 1 package
- Low saturation voltage
- Enhancement mode tf = 0.5µs (Max.) trr = 0.5µs (Max.) VCE (sat) = 4.0V (Max.)
- The electrodes are isolated from case
- Part: MG25Q6ES42
- Description: Silicon N Channel IGBT GTR Module
- Manufacturer: Toshiba
- Size: 595.24 KB