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MG25Q6ES42 Datasheet

Manufacturer: Toshiba
MG25Q6ES42 datasheet preview

Datasheet Details

Part number MG25Q6ES42
Datasheet MG25Q6ES42_ToshibaSemiconductor.pdf
File Size 595.24 KB
Manufacturer Toshiba
Description Silicon N Channel IGBT GTR Module
MG25Q6ES42 page 2 MG25Q6ES42 page 3

MG25Q6ES42 Overview

TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications.

MG25Q6ES42 Key Features

  • 6 IGBTs are built into 1 package
  • High speed
  • Low saturation voltage
  • Enhancement mode
  • The electrodes are isolated from case
  • 40 ~ 125
  • 3.0 3000 0.3 0.4 0.25
  • 0.6 0.8 0.5
  • 0.625 °C/W
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