MG30G1BL2 Overview
SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIONS.
MG30G1BL2 Key Features
- 40-125
- DUTY CYCLE=Q5%
- 0.5 °C/W
- I C i r~r
- I c MAxN/PULSEDJX
| Part number | MG30G1BL2 |
|---|---|
| Datasheet | MG30G1BL2_Toshiba.pdf |
| File Size | 121.13 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Triple Transistor |
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SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) IHB30 HGIH POWER SWITCHING APPLICATIONS.
| Part Number | Description |
|---|---|
| MG30G1BL3 | (MG30Gxxxx) Transistor |
| MG30G1JL1 | (MG30Gxxxx) Transistor |
| MG30G2CL3 | Silicon NPN Triple Transistor |
| MG30G2DL1 | (MG30Gxxxx) Transistor |
| MG30G6EL1 | (MG30Gxxxx) Transistor |
| MG30G6EL2 | TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE |
| MG300J1US51 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG300J2YS50 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |
| MG300Q1US11 | INSULATED GATE BIPOLAR TRANSISTOR |
| MG300Q1US41 | N CHANNEL IGBT (HIGH POWER SWITCHING / MOTOR CONTROL APPLICATIONS) |