• Part: MG30G2CL3
  • Description: Silicon NPN Triple Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 165.31 KB
Download MG30G2CL3 Datasheet PDF
Toshiba
MG30G2CL3
FEATURES . The Collector is Isolated from Case. . 2 Power Transistor and 2 Free Wheeling Diods are Built-in to 1 Package. . High DC Current Gain : h FE=100(Min. ) (Ic=30A) . Low Saturation Voltage : Vc E(sat)=2V(Max. ) (Ic=30A) . High Speed : tf=2//s(Max. ) (Ic=30A) 13 ,13 ,13 13 3 103103103 tirh L Unit in mm EQUIVALENT CIRCUIT o E2 EIAJ TOSHIBA Weight : 210g 2-68A1A Bl E1/C2 B2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Collector-Emitter Sustaining Voltage Emitter-Base Voltage Collector Current 1ms Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Isolation Voltage Screw Torque (Terminal/Mounting) SYMBOL VCBO VCEO VCEO(SUS) Vebo ic ic -ic IB PC T T stg Vlsol RATING UNIT °C -40-125 °c 2000 (AC 1 Minute) V 20/30 kg -cm TOSHIBA CORPORATION iiiiiiiiiiiiiiiiiniiiiiiii iiiiiiiimiiiiiii...