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MG50G2CL3 - Silicon NPN Triple Transistor

Key Features

  • . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diods are Built-in to 1 Package. 92 80 : . Bl 01 -i . B2.pr J . in to s LLJ-ej A.
  • 054= El C2 5-M4 . High DC Current Gain : hpE= 100(Min. ) (Ic=50A) . Low Saturation Voltage: VcE(sat)=2V(Max. ) (Ic=50A) . High Speed : tf=2/.
  • s(Max. ) (Ic=50A).

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Datasheet Details

Part number MG50G2CL3
Manufacturer Toshiba
File Size 155.40 KB
Description Silicon NPN Triple Transistor
Datasheet download datasheet MG50G2CL3 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in ran MOTOR CONTROL APPLICATIONS. FEATURES . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diods are Built-in to 1 Package. 92 80 : .Bl 01 -i .B2.pr J . in to s LLJ-ej A —054= El C2 5-M4 . High DC Current Gain : hpE= 100(Min. ) (Ic=50A) . Low Saturation Voltage: VcE(sat)=2V(Max. ) (Ic=50A) . High Speed : tf=2/*s(Max.