MG75J2YS50 Datasheet | Toshiba

TOSHIBA GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l High input impedance. l Includes a plete half bridge in one package. l Enhancement-mode. l High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) l Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Equivalent Circuit Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC EIAJ TOSHIBA Weight: 202g (Typ.) Rating 600 ±20 75 150 75 150 390 150 - 40 ~ 125 2500 (AC 1 min.) 3/3 Unit V V W °C °C V N- m ― ― 2-94D1A 000707EAA2 - TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to ply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. 2001-02-22 1/5 Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter...