MG75J2YS50 Description
TOSHIBA GTR Module Silicon N Channel IGBT MG75J2YS50 High Power Switching Applications Motor Control Applications l The electrodes are isolated from case. l Includes a plete half bridge in one package. tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A) l Low saturation voltage.
MG75J2YS50 Key Features
- The electrodes are isolated from case
- High input impedance
- Includes a plete half bridge in one package
- Enhancement-mode
- High speed : tf = 0.30µs(Max) (IC = 75A) trr = 0.15µs(Max) (IF = 75A)
- Low saturation voltage : VCE (sat) = 2.70V (Max) (IC = 75A) Equivalent Circuit MG75J2YS50 Unit: mm Maximum R