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MG90V2YS40 - N-Channel IGBT

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Part number MG90V2YS40
Manufacturer Toshiba
File Size 234.86 KB
Description N-Channel IGBT
Datasheet download datasheet MG90V2YS40 Datasheet
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    TOSHIBA GTR Module Silicon N Channel IGBT MG90V2YS40 High Power Switching Applications Motor Control Applications MG90V2YS40 Unit: mm l The electrodes are isolated from case. l High input impedance l Includes a complete half bridge in one package. l Enhancement-mode l High speed : tf = 1.5µs (max) (IC = 90A) trr = 0.3µs (max) (IF = 90A) Equivalent Circuit Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― JEDEC JEITA TOSHIBA Weight: 430g (typ.
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