MP4006
TOSHIBA Power Transistor Module Silicon NPN&PNP Epitaxial Type (Darlington power transistor 4 in 1)
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
- -
- Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : IC (DC) = ±2 A (max) High DC current gain: h FE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 80 80 8 2 3 0.5 2.0 PNP
- 80
- 80
- 8
- 2
- 3
- 0.5 Unit V V V
JEDEC
― ― 2-25A1B
JEITA TOSHIBA
Weight: 2.1 g (typ.)
PT Tj Tstg
4.0 150
- 55 to 150
W °C °C
Array Configuration
R1 R2 10
7...
