MP6901
MP6901 is Power Transistor manufactured by Toshiba.
TOSHIBA Power Transistor Module Silicon Epitaxial Type (Darlington power transistor 6 in 1)
High Power Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
Industrial Applications Unit: mm
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Package with heat sink isolated to lead (SIP 12 pin) High collector power dissipation (6 devices operation) : PT = 5 W (Ta = 25°C) High collector current: IC (DC) = ±4 A (max) High DC current gain: h FE = 2000 (min) (VCE = ±2 V, IC = ±1 A)
Maximum Ratings (Ta = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (6 devices operation) Isolation voltage Junction temperature Storage temperature range Ta = 25°C Tc = 25°C PT VIsol Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating NPN 100 80 5 4 6 0.4 3.0 5.0 W 25 1000 150
- 55 to 150 V °C °C PNP
- 100
- 80
- 5
- 4
- 6
- 0.4 Unit V V V A A W
JEDEC JEITA TOSHIBA
― ― 2-32B1D
Weight: 6.0 g (typ.)
Array Configuration
R1 R2 4 7 3 10 6 9 12
2 R1 R2 1
11 R1 ≈ 4.5 kΩ, R2 ≈ 300 Ω
2002-11-20
Thermal Characteristics
Characteristics Thermal resistance of junction to ambient (6 devices operation, Ta = 25°C) Thermal resistance of junction to case (6 devices operation, Tc = 25°C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) ΣRth (j-c) 5.0 °C/W Symbol Max Unit
ΣRth (j-a)
°C/W
°C
Electrical Characteristics (Ta = 25°C) (NPN transistor)
Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO h FE (1) h FE (2) VCE (sat) VBE (sat) f T Cob ton Input Switching time 20 µs Storage time tstg IB1 IB2 Test Condition VCB = 100 V, IE = 0 A VCE = 80 V, IB = 0 A VEB = 5 V, IC = 0 A IC = 1 m A, IE = 0...
