MT3S20P - Silicon NPN Epitaxial Planar Type Transistor

Toshiba

Key Features

Low Noise Figure: NF=1.45dB (typ. ) (@f=1GHz).
High Gain: |S21e|2=11dB (typ. ) (@f=1GHz) Marking MT3S20P Unit: mm MU Absolute Maximum Ratings (Ta = 25°C) PW-Mini JEDEC - JEITA SC-62.

MT3S20P silicon npn epitaxial planar type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	MT3S20P
Manufacturer	Toshiba
File Size	215.71 KB
Description	Silicon NPN Epitaxial Planar Type Transistor
Datasheet	MT3S20P Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S20P VHF-UHF Band Low-Noise, Low-Distortion Amplifier Applications FEATURES • Low Noise Figure: NF=1.45dB (typ.) (@f=1GHz) • High Gain: |S21e|2=11dB (typ.) (@f=1GHz) Marking MT3S20P Unit: mm MU Absolute Maximum Ratings (Ta = 25°C) PW-Mini JEDEC - JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.05 g (Typ.) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCBO 20 V VCEO 12 V VEBO 1.5 V IC 80 mA IB 10 mA PC 400 mW PC (Note1) 1.8 W Tj 150 °C Tstg −55 to 150 °C Note.