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MT4S200U - SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR

Features

  • Low Noise Figure :NF=1.7dB (@f=5.8GHz).
  • High Gain:|S21e|2=9.5dB (@f=5.8GHz) Marking 4 3 P２ 12 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector-Current Base-Current Collector Power dissipation VCBO VCEO VEBO IC IB Pc 8V 4V 1.2 V 35 mA 5 mA 100 mW Collector Power dissipation PC(Note1) 140 mW Junction temperature Tj 150 °C Storage temperature Range Tstg.
  • 55~1.

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Datasheet Details

Part number MT4S200U
Manufacturer Toshiba
File Size 161.00 KB
Description SILICON-GERMANIUM NPN EPITAXIAL PLANER TYPE TRANSISTOR
Datasheet download datasheet MT4S200U Datasheet

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