RN1102MFV Datasheet Text
RN1101MFV to RN1106MFV
Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN1101MFV/02MFV/03MFV/04MFV/05MFV/06MFV
1. Applications
- Switching
- Inverter Circuits
- Interfacing
- Driver Circuits
2. Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) Ultra-small package, suited to very high density mounting (3) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (4) Toshiba offers transistors with a wide range of resistance to acmodate various circuit designs. (5) plementary to RN2101MFV to RN2106MFV
3. Equivalent Circuit
4. Bias Resistor Values
Part No. RN1101MFV RN1102MFV RN1103MFV RN1104MFV RN1105MFV RN1106MFV
R1 (kΩ)
4.7 10 22 47 2.2 4.7
R2 (kΩ)
4.7 10 22 47 47 47
©2021
1
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2005-02
2021-08-18 Rev.3.0
5. Packaging and Pin Assignment
RN1101MFV to RN1106MFV
1: Base 2: Emitter 3: Collector
VESM
6. Orderable part number
Orderable part number
AEC-Q101...
