RN1207
RN1207~RN1209
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
RN1207,RN1208,RN1209
Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l plementary to RN2207~2209 Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No. RN2207 RN2208 RN2208
R1 (kΩ) 10 22 47
R2 (kΩ) 47 47 22
Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage RN1207 Emitter-base voltage RN1208 RN1209 Collector current Collector power dissipation Junction temperature Storage temperature range Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 6 7 15 100 300 150
- 55~150
JEDEC EIAJ TOSHIBA Weight: 0.13g
― ― 2-4E1A
Unit V V
V m A m W °C °C
2001-06-07
RN1207~RN1209
Electrical Characteristics (Ta = 25°C)
Characteristic Collector cut-off current RN1207 Emitter cut-off current RN1208 RN1209 RN1207 DC current gain RN1208...
