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RN1224 Datasheet PDF

Toshiba RN1224

Silicon NPN Transistor

Part No. RN1224
Datasheet RN1224 Download
Manufacturer
Toshiba
Description Silicon NPN Transistor
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RN1224 datasheet page 1 preview

APPLICATIONS

l High current type (IC(MAX) = 800mA) l With built-in bias resistors. l Simplify circuit design l Reduce a quantity of parts and manufacturing process l Low VCE (sat) l Complementary to RN2221~2227 Unit: mm Equivalent Circuit Type No. RN1221 RN1222 RN1223 RN1224 RN1225 RN1226 RN1227 R1 (kΩ) 1 2.2 4.7 10 0.47 1 2.2 R2 (kΩ) 1 2.2 4.7 10 10 10 10 JEDEC EIAJ TOSHIBA Weight: 0.13g ― ― 2-4E1A

MAXIMUM RATINGS

(Ta = 25°C) Characteristic Collector-base voltage Collector-emitter voltage RN1221~1227 RN1221~1224 Emitter-base voltage RN1225, 1226 RN1227 Collector current Collector power dissipation Junction temperature Storage temperature range RN1221~1227 Ic Pc Tj Tstg VEBO Symbol VCBO VCEO Rating 50 50 10 5 6 800 300 150 −55~150 mA mW °C °C V Unit V V 1 2001-06-07...
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