• Part: RN1608
  • Description: Silicon NPN Epitaxial Type Transistors
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 432.95 KB
Download RN1608 Datasheet PDF
Toshiba
RN1608
RN1607 to RN1609 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) RN1607, RN1608, RN1609 Switching, Inverter Circuit, Interface Circuit and Driver Circuit Unit: mm - Including two devices in SM6 (super-mini-type with six (6) leads) - With built-in bias resistors. - Simplified circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs. - plementary to RN2607 to RN2609 Equivalent Circuit and Bias Resistor Values Part No.. R1 (kΩ) R2 (kΩ) RN1607 RN1609 SM6 JEDEC ― JEITA ― TOSHIBA 2-3N1A Weight: 0.015 g (typ.) Equivalent Circuit (Top View) © 2019 Toshiba Electronic Devices & Storage Corporation Start of mercial production 1988-11 2019-11-13 RN1607 to RN1609 Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base...