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RN1705JE - Silicon NPN Epitaxial Type Transistors

This page provides the datasheet information for the RN1705JE, a member of the RN1701JE Silicon NPN Epitaxial Type Transistors family.

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Other Datasheets by Toshiba
  • RN1705 - Silicon NPN Epitaxial Type Transistors
  • RN1701 - Silicon NPN Epitaxial Type Transistors
  • RN1701JE - Silicon NPN Epitaxial Type Transistors
  • RN1702 - Silicon NPN Epitaxial Type Transistors
  • RN1702JE - Silicon NPN Epitaxial Type Transistors
  • RN1703 - Silicon NPN Epitaxial Type Transistors
  • RN1703JE - Silicon NPN Epitaxial Type Transistors
  • RN1704 - Silicon NPN Epitaxial Type Transistors

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RN1701JE~RN1706JE TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor Built-in Transistor) RN1701JE, RN1702JE, RN1703JE RN1704JE, RN1705JE, RN1706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • A wide range of resistor values is available for use in various circuit designs. • Complementary to RN2701JE to RN2706JE Equivalent Circuit and Bias Resistor Values C R1 B E R2 Type No. RN1701JE RN1702JE RN1703JE RN1704JE RN1705JE RN1706JE R1 (kΩ) 4.7 10 22 47 2.2 4.
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