RN2113MFV
RN2112MFV, RN2113MFV
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor)
RN2112MFV, RN2113MFV
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
- Ultra-small package, suited to very high density mounting
- Incorporating a bias resistor into the transistor reduces the number of parts, so enabling the manufacture of ever more pact equipment and lowering assembly cost.
- A wide range of resistor values is available for use in various circuits.
- plementary to the RN1112MFV, RN1113MFV
Equivalent Circuit
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
Symbol VCBO VCEO VEBO IC
PC (Note 1) Tj Tstg
Rating
- 50
- 50
- 5
- 100 150 150
- 55 to 150
Unit V V V m A m W °C °C
1.BASE
VESM
2.EMITTER 3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1S
Weight:...
