RN2506 Datasheet | Toshiba

RN2501 to RN2506 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2501, RN2502, RN2503 RN2504, RN2505, RN2506 Switching, Inverter Circuit, Unit: mm Interface Circuit and Driver Circuit - Including two devices in SMV (super mini type with 5 leads) - With built-in bias resistors. - Simplify circuit design - Reduce a quantity of parts and manufacturing process and miniaturize equipment. - Various resistance values are available to suit various circuit designs. - plementary to RN1501 to RN1506 Equivalent Circuit and Bias Resistor Values Part No . RN2501 RN2502 RN2503 RN2504 RN2505 RN2506 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47 47 JEDEC ― JEITA ― TOSHIBA 2-3L1A Weight: 14 mg (typ.) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 mon) Equivalent Circuit (Top View) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter base voltage Collector current Collector power dissipation Junction temperature Storage temperature range RN2501 to 2506 RN2501 to 2504 RN2505, 2506 RN2501 to 2506 VCBO...