Datasheet4U Logo Datasheet4U.com

RN2706JE - Silicon PNP Epitaxial Type Transistor

This page provides the datasheet information for the RN2706JE, a member of the RN2701JE Silicon PNP Epitaxial Type Transistor family.

📥 Download Datasheet

Datasheet preview – RN2706JE
Other Datasheets by Toshiba

Full PDF Text Transcription

Click to expand full text
RN2701JE to RN2706JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2701JE, RN2702JE, RN2703JE RN2704JE, RN2705JE, RN2706JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm • Two devices are incorporated into an Extreme-Super-Mini (5-pin) package. • Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. • Complementary to RN1701JE to RN1706JE Equivalent Circuit and Bias Resistor Values Type No. RN2701JE RN2702JE RN2703JE RN2704JE RN2705JE RN2706JE R1 (k) 4.7 10 22 47 2.2 4.7 R2 (k) 4.7 10 22 47 47 47 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.
Published: |