RN2912AFS Datasheet | Toshiba

RN2912AFS, RN2913AFS TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor) RN2912AFS, RN2913AFS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications 1.0±0.05 Unit: mm 0.1±0.05 0.35 0.35 0.8±0.05 0.1±0.05 0.15±0.05 (E1) (B1) (C2) (E2) (B2) (C1) Unit nA nA V pF kΩ - - 1.0±0.05 Two devices are incorporated into a fine-pitch, small-mold (6-pin) package. Incorporating a bias resistor into a transistor reduces the parts count. Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly costs. 0.7±0.05 1 2 3 6 5 4 0.1±0.05 - plementary to the RN1912AFS/RN1913AFS 0.48...