RN4608
TOSHIBA Transistor Silicon NPN/PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
Switching, Inverter Circuit, Interface Circuit and Driver Circuit
Unit: mm
- Including two devices in SM6 (super mini type with 6 leads)
- With built-in bias resistors
- Simplify circuit design
- Reduce a quantity of parts and manufacturing process and iniaturize equipment.
Equivalent Circuit and Bias Resistor Values
R1: 22kΩ R2: 47kΩ (Q1, Q2 mon)
Q1 Absolute Maximum Ratings (Ta = 25°C)
JEDEC
―
JEITA
―
TOSHIBA
2-3N1A
Weight: 15 mg (typ.)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol
VCBO VCEO VEBO
Rating
Unit
- 50
- 50
- 7
- 100 m A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current
Symbol
VCBO VCEO VEBO
Rating
Unit...
