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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. TV VERTICAL OUTPUT APPLICATIONS.
FEATURES . Good Linearity of hEE . Complementary to S1237
Unit in mm
10.3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Base Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature
SYMBOL vCBO VcEO v EBO ic IE IB
pC
T
J
T stg
RATING 90 90
5 4
-4
3
40
150
-55-150
UNIT V V V A A A
W
°C °C
a
2.54
>r
Ai
2.54
N
Si
J"°Jr-i
-
to ci
X
E-
4
{
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
JEDEC TOSHIBA
TO— 220AB SC—4 6
g— 10A1A
Mounting Kit No. AC75
Weight : 1.
S1236 Datasheet
