• Part: S1423
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 83.58 KB
Download S1423 Datasheet PDF
Toshiba
S1423
FEATURES : - Excellent h FE Linearity : h FE (0.1m A) h FE (2m A) =0.95(Typ.) . Designed for plementary Use with S1420(h FE =70 700 . Small Collector Output Capacitance: C ob =4. 5p F(Max. Unit in MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collect or Power Dissipation Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO VEBi. Jc IB PC stg RATING -40 -40 -200 -200 625 150 -55-150 UNIT m A m A m V ~°C~ 1. EMITTER 2. BASE 3. COLLECTOR JEDEC - 5 F 1 P Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL CONDITION Collector C utoff Current Emitter Cutoff Current Collector-Emitter Breakdown Voltage x CBO T EBO VCb=-30V, Ie=0 VEB =-6V, I C =0 v (BR)CEO IC=-lm A, I B =0 DC Current Gain Collector-Emitter Saturation Voltage h FE VCE=~5V, Ic=-2rr L4 v CE(sat, Ic=-50m A, IB =-10m A Base-Emitter Voltage V BE Collector Output Capacitance Cob Transition...