- Excellent hFE Linearity : hFE (0.1mA) hFE (2mA)
=0.95(Typ. ) . Designed for Complementary Use with S1420(hFE =70 700 . Small Collector Output Capacitance: C ob =4. 5pF(Max. S1423
Unit in.
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)
;
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
GENERAL PURPOSE AMPLIFIER AMPLIFIER APPLICATIONS.
AND
LOW
NOISE
FEATURES:
- Excellent hFE Linearity : hFE (0.1mA) hFE (2mA)
=0.95(Typ.) . Designed for Complementary Use with S1420(hFE =70 700 . Small Collector Output Capacitance: C ob =4. 5pF(Max.
S1423
Unit in
MAXIMUM RATINGS (Ta=25°C CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collect or Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL VCBO v CEO
VEBi. Jc
IB PC
stg
RATING -40 -40
-200 -200 625 150 -55-150
UNIT
mA mA mV
~°C~
1. EMITTER 2. BASE 3. COLLECTOR
JEDEC
2 —5 F 1 P Weight : 0.
S1423 Datasheet
