• Part: S1840
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 99.12 KB
Download S1840 Datasheet PDF
Toshiba
S1840
FEATURES - Hi - h Voltage : VCB0 =150V, VCE0 =150V - Low Saturation Voltage : VCE(sat )=0 . 5V(Max. Unit in MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL v CBO v CEO VEBO ic IB PC r stg RATING 150 150 30 10 625 150 -55-150 UNIT V 1. EMITTER 2. BASE m A 3. COLLECTOR m A JEDEC m W EIAJ TO-92 SC-43 TOSHIBA 2-5F1P Weight : 0.21g ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL CONDITION ICBO JEB0 VCB =150V, I E =0 VEB^5V, l c =o v (BR)CB0 IC=0-lm A, I E =0 Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Volt age Base-Emitter Saturation Voltage V (BR)CE0 IC=lm A, IR =0 h FE VCE=3V, I C =10m A VCE(sat) Ic=10m A, l B=lm A VBE(sat) IC=10m A, l B=lm A Transition Frequency...