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SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
FEATURES . Suitable for TV Sound Output, Vert. Deflection
Output. . Designed for Complementary Use with S1955.
Unit in mm
^9. 9 MAX. 03.2±O.2
1'
Jr.i ,
=U
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO ic IE ?C
T.i
T stg
RATING
60 50
5
1.5 -1.5
1.5 150
-55-150
UNIT
V V V A A W °C °c
T—
3°
1. EMITTER Z. BASE 3. COLLECTOR fHEAT SINK)
JEDEC EIAJ TOSHIBA
Weight
TO-202 1.
S1954 Datasheet
