S1954
S1954 is NPN Transistor manufactured by Toshiba.
v
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS.
Features
. Suitable for TV Sound Output, Vert. Deflection
Output. . Designed for plementary Use with S1955.
Unit in mm
^9. 9 MAX. 03.2±O.2
1'
Jr.i ,
=U
MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Range
SYMBOL
VCBO VCEO VEBO ic IE ?C
T.i
T stg
RATING
60 50
1.5 -1.5
1.5 150
-55-150
UNIT
V V V A A W °C °c
T-
3°
1. EMITTER Z. BASE 3. COLLECTOR fHEAT SINK)
JEDEC EIAJ...
