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SSM14N956L - Silicon N-Channel MOSFET

Key Features

  • (1) Low source-source on-resistance : RSS(ON) = 1.1 mΩ (typ. ) (@VGS = 3.8 V) : RSS(ON) = 1.0 mΩ (typ. ) (@VGS = 4.5 V) (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPED-302701 ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commer.

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Datasheet Details

Part number SSM14N956L
Manufacturer Toshiba
File Size 430.59 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM14N956L Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS SSM14N956L SSM14N956L 1. Applications • Battery protection circuits 2. Features (1) Low source-source on-resistance : RSS(ON) = 1.1 mΩ (typ.) (@VGS = 3.8 V) : RSS(ON) = 1.0 mΩ (typ.) (@VGS = 4.5 V) (2) RoHS Compatible (Note 1) (3) Halogen-free Note 1: The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 3. Packaging and Pin Assignment TCSPED-302701 ©2022-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2022-06 2023-10-10 Rev.4.0 SSM14N956L 4.