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SSM3K7002CFU - Silicon N-Channel MOSFET

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Features

  • (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ. ) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ. ) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ. ) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment USM SSM3K7002CFU 1. Gate 2. Source 3. Drain Start of commercial production 2015-04 1 2015-05-07 Rev.1.0 SSM3K7002CFU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain.

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Datasheet Details

Part number SSM3K7002CFU
Manufacturer Toshiba
File Size 205.98 KB
Description Silicon N-Channel MOSFET
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MOSFETs Silicon N-Channel MOS SSM3K7002CFU 1. Applications • High-Speed Switching 2. Features (1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ.) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ.) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ.) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment USM SSM3K7002CFU 1. Gate 2. Source 3. Drain Start of commercial production 2015-04 1 2015-05-07 Rev.1.0 SSM3K7002CFU 4.
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