SSM3K7002CFU Datasheet Silicon N-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon N-Channel MOS SSM3K7002CFU 1.

Applications • High-Speed Switching 2.

(1) Gate-Source diode for protection (2) Low drain-source on-resistance : RDS(ON) = 2.8 Ω (typ. ) (@VGS = 10 V, ID = 100 mA) RDS(ON) = 3.1 Ω (typ. ) (@VGS = 5 V, ID = 100 mA) RDS(ON) = 3.2 Ω (typ. ) (@VGS = 4.5 V, ID = 100 mA) 3. Packaging and Pin Assignment USM SSM3K7002CFU 1. Gate 2. Source 3. Drain Start of commercial production 2015-04 1 2015-05-07 Rev.1.0 SSM3K7002CFU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain.

Part Number	Description	Manufacturer
SSM3K7002AF	MOSFET	Toshiba Semiconductor
SSM3K7002AFU	MOSFET	Toshiba Semiconductor
SSM3K7002BF	Silicon N-Channel MOSFET	Toshiba Semiconductor
SSM3K7002BFS	Silicon N-Channel MOSFET	Toshiba Semiconductor
SSM3K7002BFU	Silicon N-Channel MOSFET	Toshiba Semiconductor