SSM6K781G Datasheet | Toshiba

Features (1) 1.5-V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 17.9 mΩ (typ.) (@VGS = 2.5 V, ID = 1.5 A) RDS(ON) = 14.4 mΩ (typ.) (@VGS = 4.5 V, ID = 1.5 A) 3. Packaging and Pin Assignment WCSP6C A1: Drain A2: Gate B1: Drain B2: Source C1: Drain C2: Source 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS Gate-source voltage VGSS ±8 Drain current (DC) (Note 1) Drain current (pulsed) (Note 1), (Note 2) Power dissipation (Note 3) Power dissipation (t ≤ 10 s) (Note 3) Channel temperature Tch  Storage temperature Tstg -50 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the channel temperature does not exceed 150 . Note 2: Pulse width (PW) ≤ 10 ms, duty ≤ 1% Note 3: Device mounted on an FR4 board. (40.0 mm × 40.0 mm × 1.6 mm ,Cu Pad: 1369 mm2 4 layer) Start of mercial...