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SSM6N35AFE - Silicon N-Channel MOSFET

Key Features

  • (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment ES6 SSM6N35AFE 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2017-02-17 Rev.

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Datasheet Details

Part number SSM6N35AFE
Manufacturer Toshiba
File Size 225.05 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet SSM6N35AFE Datasheet

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MOSFETs Silicon N-Channel MOS SSM6N35AFE 1. Applications • High-Speed Switching • Analog Switches 2. Features (1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment ES6 SSM6N35AFE 1: Source 1 2: Gate 1 3: Drain 2 4: Source 2 5: Gate 2 6: Drain 1 ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2017-02-17 Rev.3.0 SSM6N35AFE 4.