T2N7002BK - Silicon N-Channel MOSFETs

Toshiba

Key Features

(1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ. ) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ. ) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ. ) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2019-10-25 Rev.3.0 T2N7002BK 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage.

T2N7002BK silicon n-channel mosfets by Toshiba - Datasheet Preview

Datasheet Details

Part number	T2N7002BK
Manufacturer	Toshiba
File Size	235.15 KB
Description	Silicon N-Channel MOSFETs
Datasheet	T2N7002BK Datasheet

Full PDF Text Transcription for T2N7002BK (Reference)

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MOSFETs Silicon N-Channel MOS T2N7002BK 1. Applications • High-Speed Switching 2. Features (1) Low drain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(...

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rain-source on-resistance : RDS(ON) = 1.05 Ω (typ.) (@VGS = 10 V) RDS(ON) = 1.15 Ω (typ.) (@VGS = 5.0 V) RDS(ON) = 1.2 Ω (typ.) (@VGS = 4.5 V) 3. Packaging and Internal Circuit SOT23 T2N7002BK 1: Gate 2: Source 3: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-05 2019-10-25 Rev.3.0 T2N7002BK 4.

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