Datasheet Summary
:
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
PRIMARILY INTENDED FOR USE IN DRIVER STAGE OF AUDIO AMPLIFIERS.
Features
. High VqeO
High hpE Low Noise
65V (TBC546) 45V (TBC547) 30V (TBC548)
110-800
TBC546 TBC547 TBC548
Unit in mm
5.1 MAX. r
-i
.
MAXIMUM RATINGS (Ta=25 C)
CHARACTERISTIC
SYMBOL
Collector-Base Breakdown Voltage
TBC546 TBC547 v (BR)CBO TBC548
Collector-Emitter Breakdown Voltage
TBC546 TBC547 V (BR) CEO TBC548
Emitter-Base Breakdown Voltage
TBC546 TBC547 V (BR)EBO TBC548
DC ic
Collector Current
Peak
Base Current (Peak)
Collector Power Dissipation
?C
Junction...