• Part: TBC560
  • Description: Silicon PNP Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 53.07 KB
Download TBC560 Datasheet PDF
Toshiba
TBC560
FEATURES . High V CE0 : -45V (TBC560) -25V (TBC559) . High h FE = 125-475 Unit in mm 5. 1 MAX. , 1 : < S t- I'] O.E35 MAX. 1 r C.45 1! m r s CO 00 A c! r- r-t 1.27 m / 23J MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL Collector-Base Breakdown Voltage TBC559 v (BR)CBO Collector-Emitter Breakdown Voltage TBC559 v (BR) CEO Emitter-Base Breakdown Voltage v (BR)EBO RATING -30 -50 -25 -45 -5 Collector Current DC Peak Base Current (Peak) Collector Power Dissipation Junction Temperature Storage Temperature Range ic l CP IBP PC T T stg -100 -200 -200 500...