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TBD62308AFAG - 4-channel Low active high current sink type DMOS transistor array

Key Features

  • 4 circuits built-in.
  • High voltage : VOUT = 50 V (MAX).
  • High current : IOUT = 1.5 A/ch (MAX).
  • Input voltage(output on): VCC - 3.5 V (MAX).
  • Input voltage(output off) : VCC - 0.4 V (MIN).
  • Package : P-SSOP24-0613-1.00-001 P-SSOP24-0613-1.00-001 Weight: 0.35 g (Typ. ) Pin connection (top view) COMMON O4 I4 NC GND GND GND GND NC I3 O3 COMMON 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 8 9 10 11 12 VCC1 O1 I1 NC GND GND GND GND NC.

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Datasheet Details

Part number TBD62308AFAG
Manufacturer Toshiba
File Size 193.53 KB
Description 4-channel Low active high current sink type DMOS transistor array
Datasheet download datasheet TBD62308AFAG Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TBD62308AFAG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62308AFAG 4channel Low active high current sink type DMOS transistor array TBD62308AFAG are DMOS transistor array with 4 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. Features • 4 circuits built-in • High voltage : VOUT = 50 V (MAX) • High current : IOUT = 1.5 A/ch (MAX) • Input voltage(output on): VCC - 3.5 V (MAX) • Input voltage(output off) : VCC - 0.4 V (MIN) • Package : P-SSOP24-0613-1.00-001 P-SSOP24-0613-1.00-001 Weight: 0.35 g (Typ.