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TBD62783APG - DMOS transistor array

Key Features

  • 8 circuits built-in.
  • High voltage.
  • High current : VOUT = 50 V (MAX) : IOUT = -500 mA (MAX for each channel).
  • Input voltage(output on) : 2.0 V (MIN).
  • Input voltage(output off) : 0.6 V (MAX).
  • Package : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 P-DIP18-300-2.54-001 TBD62783AFG Pin connection (top view) TBD62783AFNG TBD62783AFWG Pin connection may be simplified.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TBD62783APG/FG/FNG/FWG TOSHIBA BiCD Integrated Circuit Silicon Monolithic TBD62783APG, TBD62783AFG, TBD62783AFNG, TBD62783AFWG 8channel source type DMOS transistor array TBD62783A series are DMOS transistor array with 8 circuits. It has a clamp diode for switching inductive loads built-in in each output. Please be careful about thermal conditions during use. TBD62783APG Features • 8 circuits built-in • High voltage • High current : VOUT = 50 V (MAX) : IOUT = -500 mA (MAX for each channel) • Input voltage(output on) : 2.0 V (MIN) • Input voltage(output off) : 0.6 V (MAX) • Package : PG type P-DIP18-300-2.54-001 FG type SOP18-P-375-1.27 FNG type SSOP18-P-225-0.65 FWG type P-SOP18-0812-1.27-001 P-DIP18-300-2.