TBF871 - Silicon NPN Triple Transistor

This page provides the datasheet information for the TBF871, a member of the TBF869 Silicon NPN Triple Transistor family.

Toshiba

📥 Download Datasheet

Datasheet Details

Part number	TBF871
Manufacturer	Toshiba
File Size	143.09 KB
Description	Silicon NPN Triple Transistor
Datasheet	TBF871 Datasheet
Additional preview pages of the TBF871 datasheet.

📁 Similar Datasheet

TBF10M - Silicon Bridge Rectifiers (GME)
TBF20M - Silicon Bridge Rectifiers (GME)

Other Datasheets by Toshiba

TBF870 - Silicon PNP Transistor
TBF872 - Silicon PNP Transistor
TBF869 - Silicon NPN Triple Transistor

Full PDF Text Transcription

Click to expand full text

SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS) HIGH VOLTAGE SWITCHING AND AMPLIFIER APPLICATIONS. COLOR TV CHROMA OUTPUT APPLICATIONS. . PNP Complements are TBF870 and TBF872. TBF869 TBF871 9.9MAX. Unit in mm 03.2x012 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage TBF869 TBF871 Collector-Emitter Voltage TBF869 TBF871 Emitter-Base Voltage Collector Current DC Peak Total Power Dissipation Base Current Junction Temperature Storage Temperature Range Solder Temperature, 1.5mm from Case for 10 Seconds SYMBOL 'CBO RATING 250 300 UNIT 'CEO v EBO ic ICP tot IB stg 250 300 50 mA 100 1.6 5.0 (Tc=25°C) 20 mA 150 -65 -150 350 1. EMITTER 2. COLLECTOR (HEAT SINK) a BASE JEDEC TOSHIBA 2-10F1B Weight : 1.

Published: Oct 26, 2005 |