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TC511000Z-10 Datasheet Dram

Manufacturer: Toshiba

Overview: TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit.

The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad- vanced circuit techniques to provide wide operating margins, both internally and to the system user.

Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.

Key Features

  • include single power supply of 5V±10% tolerance" direct interfacing capability with high performance logic families such as Schottky TTL. IJTest Mode" function is implemented from Ilevision C.

More Datasheets from Toshiba

Part Number Description
TC511000Z-12 DRAM
TC511000Z-85 DRAM
TC511000J-10 DRAM
TC511000J-12 DRAM
TC511000J-85 DRAM
TC511000P-10 DRAM
TC511000P-12 DRAM
TC511000P-85 DRAM
TC511001AJ-10 DRAM
TC511001AJ-70 DRAM

TC511000Z-10 Distributor