• Part: TC511000Z-12
  • Description: DRAM
  • Manufacturer: Toshiba
  • Size: 633.09 KB
Download TC511000Z-12 Datasheet PDF
TC511000Z-12 page 2
Page 2
TC511000Z-12 page 3
Page 3

Datasheet Summary

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE CMOS DESCRIPTION TC511000P/J/Z-85, TC511000P/J/Z-l0 TC511000P/J/Z-12 The TC5llOOOP/J/Z is the ne~v generation dynamic RAN organized 1,048,576 words by 1 bit. The TC5llOOOP/J/Z utilizes TOSHIBA's CHOS Silicon gate process technology as well as ad- vanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TC5llOOOP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides high system bit densities and is patible with widely available automated testing and...