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TC511001J-12 - DRAM

Download the TC511001J-12 datasheet PDF. This datasheet also covers the TC511001P-85 variant, as both devices belong to the same dram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (TC511001P-85-Toshiba.pdf) that lists specifications for multiple related part numbers.

General Description

TC511001 P/J/Z-S5, TC511001 P/J/Z-l0 TC511 001 P/J/Z-12 The TC5ll00lP/J/Z is the new generation dynamic R&~ organized 1,048,576 ~vords by 1 bit.

The TC5ll00lP/J/Z utilizes TOSHIBA's caos Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user.

Multiplexed address inputs permit the TC5ll00lP/J/Z to be packaged in a standard 18 pin plastic DIP, 26/20 pin plastic SOJ and 20/19 pin plastic ZIP.

Overview

TOSHIBA MOS MEMORY PRODUCT 1,048,576 WORDS X 1 BIT DYNAMIC RAM SILICON GATE.

Key Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL. The special feature of TC5Il00IP/J/Z is nibble mode, allowing the user to serially access 4 bits of data at a high data r.

More Datasheets from Toshiba

Part Number Description
TC511001J-10 DRAM
TC511001J-85 DRAM
TC511001AJ-10 DRAM
TC511001AJ-70 DRAM
TC511001AJ-80 DRAM
TC511001AP-10 DRAM
TC511001AP-70 DRAM
TC511001AP-80 DRAM
TC511001AZ-10 DRAM
TC511001AZ-70 DRAM