TC511632FL-70 Datasheet PDF - Toshiba SILICON GATE CMOS PSEUDO STATIC RAM Specs

TC511632FL-70 - SILICON GATE CMOS PSEUDO STATIC RAM

Datasheet Summary

Description

The TC511632FUFTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits.

The TC511632FUFTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of WE thus simplifying the microprocessor interface. The TC511632FUFTL is available in a 40-pin small outline plastic flat package and a 44-pin outline (40 actual pins) plastic thin small outline package (forward type). Features Pin Connection (Top View).
Organization: 32,768 words.

Datasheet Details

Part number	TC511632FL-70
Manufacturer	Toshiba
File Size	412.78 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC511632FL-70 Datasheet
Additional preview pages of the TC511632FL-70 datasheet.

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Full PDF Text Transcription

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TOSHIBA SILICON GATE CMOS 1l:511632~/F1lL-70/85/10 PRELIMINARY 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The TC511632FUFTL is a 512K bit high speed CMOS pseudo static RAM organized as 32,768 words by 16 bits. The TC511632FUFTL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC511632FUFTL operates from a single 5V power supply. Refreshing is supported by a refresh (RFSH) input which enables two types of refreshing - auto refresh and self refresh. The TC511632FUFTL features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of WE thus simplifying the microprocessor interface.

Published: Feb 17, 2017 |