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TC514256P-85 - DRAM

Description

The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit.

Features

  • include single power supply of 5V±10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.

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Other Datasheets by Toshiba

Part Number Description
TC514256P-10 DRAM
TC514256P-12 DRAM
TC514256AJ-10 DRAM
TC514256AJ-70 DRAM
TC514256AJ-80 DRAM

Full PDF Text Transcription

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TOSHIBA MOS MEMORY PRODUCT 262,144 WORDS X 4 BIT DYNAMIC RAM SI LICON GATE CMOS DESCRIPTION TC514256P/J/Z-85, TC514256P/J/Z-l0 TC514256P/J/Z-12 The TCs142s6P/J/Z is the new generation dynamic RAM organized 262,144 words by 4 bit. The TCs142s6P/J/Z utilizes TOSHIBA's CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating margins, both internally and to the system user. Multiplexed address inputs permit the TCs142s6P/J/Z to be packaged in a standard 20 pin plastic DIP and 26/20 pin plastic SOJ and 20/19 pin plastic ZIP. The package size provides high system bit densities and is compatible with widely available automated testing and insertion equipment.
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