TC518128BFL-80V Datasheet PDF - Toshiba SILICON GATE CMOS PSEUDO STATIC RAM Specs

TC518128BFL-80V - SILICON GATE CMOS PSEUDO STATIC RAM

This page provides the datasheet information for the TC518128BFL-80V, a member of the TC518128BPL-70V SILICON GATE CMOS PSEUDO STATIC RAM family.

Datasheet Summary

Description

The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits.

utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage.

Features

a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface. The TC518128B-V is pin-compatible with the 1M bit CMOS static RAM JEDEC standard and is available in a 32-pin, 0.6 inch width plastic DIP, a small outline plastic flat package, and a 32-pin thin small outline plastic package (forward t.

Datasheet Details

Part number	TC518128BFL-80V
Manufacturer	Toshiba
File Size	473.10 KB
Description	SILICON GATE CMOS PSEUDO STATIC RAM
Datasheet	TC518128BFL-80V Datasheet
Additional preview pages of the TC518128BFL-80V datasheet.

📁 Similar Datasheet

TC51 - 1uA Voltage Detector (Microchip)

TC510 - Precision Analog Front Ends (Microchip)

TC510 - (TC5xx) PRECISION ANALOG FRONT ENDS (TelCom Semiconductor)

TC511402 - 1048576 x 4 BIT DYNAMIC RAM (Toshiba Semiconductor)

TC511402AJ-60 - DRAM (Toshiba Semiconductor)

TC511402AP-60 - DRAM (Toshiba Semiconductor)

TC511402ASJ-60 - DRAM (Toshiba Semiconductor)

TC511402AZ-60 - DRAM (Toshiba Semiconductor)

TC5117400BSJ - DYNAMIC RAM (Toshiba Semiconductor)

TC5117400BSJ-60 - DRAM (Toshiba Semiconductor)

Full PDF Text Transcription

Click to expand full text

TOSHIBA SILICON GATE CMOS TC518l28BPL/BFL/BFWL/BFIL-70V/80V/lOV 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518128B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. The TC518128B-V utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low power storage. The TC518128B-Voperates from a single power supply of 2.7 - 5.5V. Refreshing is supported by a refresh (RFS~ input which enables two types of refreshing - auto refresh and self refresh. The TC518128B-V features a static RAM-like interface with a write cycle in which the input data is written into the memory cell at the rising edge of RMI thus simplifying the microprocessor interface.

Published: Feb 17, 2017 |